Abstract
Vertically or laterally coupled semiconductor quantum dot (QD) arrays emerged recently as promising structures for the next generation of high-efficiency intermediate band solar cell (IBSC), due to their ability to facilitate the formation of mini-bands. The quantum coupling effect, that exists between states in QDs of an array, influences the electronic and optical properties of such structures. We present here a method based on multi-band k ⋅ p Hamiltonian combined with periodic boundary conditions, applied to predict the electronic and optical properties of InAs/GaAs QDs based vertical and lateral QD arrays. Formation of the intermediate band (IB) in all cases was achieved via delocalisation of the electron ground state (e0). By changing the geometry of the QD arrangement in arrays we have identified conditions for the IB to be separated by a pure zero density of states from the rest of states in the conduction band (CB). Due to symmetry of the QD array lattice and QD states itself, which are C 2v for the zinc blende QDs, the electronic and absorption structure needs to be obtained via sampling throughout the reciprocal space in the first Brillouin zone of QD arrays.
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Notes
- 1.
The TE means that the optical field is polarized along any of, \(\hat{e}_{x} +\hat{ e}_{y}\), directions that are “in-plane” of the structure, and is perpendicular to the QD array growth axis; TM means that the optical field is polarized along, \(\hat{e}_{z}\), direction parallel to the QD array growth axes.
References
Wolf, M.: Proc. IRE 48, 1246 (1960)
Luque, A., Martí, A.: Phys. Rev. Lett. 78, 5014 (1997)
Wahnón, P., Tablero, C.: Phys. Rev. B 65, 165115 (2002)
Palacios, P., Aguilera, I., Wahnon, P., Conesa, J.C.: J. Phys. Chem. C 112, 9525 (2008)
Palacios, P., Sanchez, K., Conesa, J., Fernandez, J., Wahnon, P.: Thin Solid Films 515, 6280 (2007)
Bailey, C.L., Liborio, L., Mallia, G., Tomić, S., Harrison, N.M.: Phys. Rev. B 81, 205214 (2010)
López, N., Reichertz, L.A., Yu, K.M., Campman, K., Walukiewicz, W.: Phys. Rev. Lett. 106, 028701 (2011)
Guimard, D., Morihara, R., Bordel, D., Tanabe, K., Wakayama, Y., Nishioka, M., Arakawa, Y.: Appl. Phys. Lett. 96, 203507 (2010)
Oshima, R., Takata, A., Okada, Y.: Appl. Phys. Lett. 93, 083111 (2008)
Martí, A., Antolín, E., Stanley, C.R., Farmer, C.D., López, N., Díaz, P., Cánovas, E., Linares, P.G., Luque, A.: Phys. Rev. Lett. 97, 247701 (2006)
Hubbard, S.M., Cress, C.D., Bailey, C.G., Raffaelle, R.P., Bailey, S.G., Wilt, D.M.: Appl. Phys. Lett. 92, 123512 (2008)
Blokhin, S., Sakharov, A., Nadtochy, A., Pauysov, A., Maximov, M., Ledentsov, N., Kovsh, A., Mikhrin, S., Lantratov, V., Mintairov, S., Kaluzhniy, N., Shvarts, M.: Semiconductors 43, 514 (2009)
Sablon, K.A., Little, J.W., Mitin, V., Sergeev, A., Vagidov, N., Reinhardt, K.: Nano Lett. 11, 2311 (2011).
Bailey, C.G., Forbes, D.V., Raffaelle, R.P., Hubbard, S.M.: Appl. Phys. Lett. 98, 163105 (2011)
Okada, Y., Morioka, T., Yoshida, K., Oshima, R., Shoji, Y., Inoue, T., Kita, T.: J. Appl. Phys. 109, 024301 (2011)
Luttinger, J.M., Kohn, W.: Phys. Rev. 97, 869 (1955)
Kane, E.O.: J. Phys. Chem. Solid. 1, 249 (1957)
Kane, E.O.: Semiconduct. Semimetal. 1, 75 (1966)
Cardona, M., Pollak, F.H.: Phys. Rev. 142, 530 (1966)
Richard, S., Aniel, F., Fishman, G.: Phys. Rev. B 70, 235204 (2004)
Rideau, D., Feraille, M., Ciampolini, L., Minondo, M., Tavernier, C., Jaouen, H., Ghetti, A.: Phys. Rev. B 74, 195208 (2006)
Foreman, B.A.: Phys. Rev. B 76, 045327 (2007)
Saïdi, I., Radhia, S.B., Boujdaria, K.: J. Appl. Phys. 107, 043701 (2010)
Bir, G.L., Pikus, G.E.: Symmetry and Strain-Induced Effects in Semiconductors. Wiley, New York (1974)
Loehr, J.P.: Physics of Strained Quantum Well Lasers. Kluwer, Boston (1998)
Pidgeon, C.R., Brown, R.N.: Phys. Rev. 146, 575 (1966)
Pryor, C.: Phys. Rev. B 57, 7190 (1998)
Stier, O., Grundmann, M., Bimberg, D.: Phys. Rev. B 59, 5688 (1999)
Cusack, M.A., Briddon, P.R., Jaros, M.: Phys. Rev. B 54, R2300 (1996)
Vukmirović, N., Indjin, D., Jovanović, V.D., Ikonić, Z., Harrison, P.: Phys. Rev. B 72, 075356 (2005)
Tomić, S., Sunderland, A.G., Bush, I.J.: J. Mater. Chem. 16, 1963 (2006)
Vukmirović, N., Tomić, S.: J. Appl. Phys. 103, 103718 (2008)
Andreev, A.D., Downes, J.R., Faux, D.A., O’Reilly, E.P.: J. Appl. Phys. 86, 297 (1999)
Li, S.-S., Xia, J.-B., Yuan, Z.L., Xu, Z.Y., Ge, W., Wang, X.R., Wang, Y., Wang, J., Chang, L.L.: Phys. Rev. B 54, 11575 (1996)
Andreev, A.: In: Proceedings of SPIE, vol. 3284, pp. 151–161 (1998); Conference on In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II, San Jose, CA, 26–28 Jan 1998
Lazarenkova, O.L., Balandin, A.A.: J. Appl. Phys. 89, 5509 (2001)
Shao, Q., Balandin, A.A., Fedoseyev, A.I., Turowski, M.: Appl. Phys. Lett. 91, 163503 (2007)
Tomić, S., Jones, T.S., Harrison, N.M.: Appl. Phys. Lett. 93, 263105 (2008)
Klos, J.W., Krawczyk, M.: J. Appl. Phys. 106, 093703 (2009)
Bragar, I., Machnikowski, P.: J. Appl. Phys. 112, 124318 (2012)
Tomić, S.: Phys. Rev. B 82, 195321 (2010)
Todorovic, G., Milanovic, V., Ikonic, Z., Indjin, D.: Solid State Comm. 110, 103 (1999)
Tadić, M., Ikonić, Z.: Phys. Rev. B 52, 8266 (1995)
Joyce, P.B., Krzyzewski, T.J., Bell, G.R., Joyce, B.A., Jones, T.S.: Phys. Rev. B 58, R15981 (1998)
Tomić, S., Howe, P., Harrison, N.M., Jones, T.S.: J. Appl. Phys. 99, 093522 (2006)
Canovas, E., Marti, A., Lopez, N., Antolin, E., Linares, P., Farmer, C., Stanley, C., Luque, A.: Thin Solid Films 516, 6943 (2008)
Zibik, E.A., Wilson, L.R., Green, R.P., Bastard, G., Ferreira, R., Phillips, P.G., Carder, D.A., Wells, J.-P.R., Cockburn, J.W., Skolnick, M.S., Steer, M.J., Hopkinson, M.: Phys. Rev. B 70, 161305 (2004)
Sauvage, S., Boucaud, P., Lobo, R.P.S.M., Bras, F., Fishman, G., Prazeres, R., Glotin, F., Ortega, J.M., Gérard, J.-M.: Phys. Rev. Lett. 88, 177402 (2002)
Andreev, A.D., O’Reilly, E.P.: Appl. Phys. Lett. 87, 213106 (2005)
van Roosbroeck, W., Shockley, W.: Phys. Rev. 94, 1558 (1954)
Sauvage, S., Boucaud, P., Julien, F.H., Gérard, J.-M., Thierry-Mieg, V.: Appl. Phys. Lett. 71, 2785 (1997)
Aleshkin, V., et al.: Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells. In: Alferov Z.I., Esaki L. (eds.) 10TH International Symposium on Nanostructures: Physics and Technology. Proceedings of The Society of Photo-Optical Instrumentation Engineers (SPIE), vol. 5023, pp. 209–212, 2003. 10th International Symposium on Nanostructures, ST Petersburg, Russia, 17–21 June 2002
Vorobjev, L.E., Firsov, D.A., Shalygin, V.A., Fedosov, N.K., Panevin, V.Y., Andreev, A., Ustinov, V.M., Cirlin, G.E., Egorov, V.A., Tonkikh, A.A., Fossard, F., Tchernycheva, M., Moumanis, K., Julien, F.H., Hanna, S., Seilmeier, A., Sigg, H.: Semicond. Sci. Tech. 21, 1341 (2006)
Strandberg, R., Reenaas, T.W.: J. Appl. Phys. 105, 124512 (2009)
Acknowledgements
The author wishes to thank Y. Okada, T. Sogabe and N. Vukmirović for many useful discussions and suggestions. The author is grateful to the New Energy and Industrial Technology Development Organization (NEDO), Japan, for financial support under grant: “Research and Development on Innovative Solar Cells: Post-Silicon solar cells for ultra-high efficiencies”. The author also wishes to thank the STFC e-Science, UK, for providing the computational resources.
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Tomić, S. (2014). Theory of Quantum Dot Arrays for Solar Cell Devices. In: Wu, J., Wang, Z. (eds) Quantum Dot Solar Cells. Lecture Notes in Nanoscale Science and Technology, vol 15. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8148-5_5
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