Abstract
In plasma etching of silicon substrates, electron-impact on a halogen-containing feed gas creates chemically-active ions and radicals that react with silicon to form volatile SiXy (X = halogen) species. Unfortunately, the most widely-used feed gas, CF4, has a high global warming potential.1 As a consequence, other halocarbons are being considered as replacements for CF4. Trifluoroiodomethane, CF3I, is a promising candidate: It has a low global-warming potential2 and plasma-etching of silicon dioxide with CF3I has recently been demonstrated3-5.
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References
Climate Change 1995: The Science of Climate Change, edited by J. T. Houghton, L. G. M. Filho, B. A. Callander, N. Harris, A. Kattenberg, and K. Maskell (Cambridge University Press, Cambridge, 1996).
S. Solomon, J. B. Burkholder, A. R. Ravishankara, and R. R. Garcia, Ozone depletion and global warming potentials of CF,I, J. Geophys. Res. [Atmos.] 99(D10) 20929–20935 (1994).
S. Samukawa, T. Mukai, and K. Tsuda, New radical control method for high-performance dielectric etching with nonperfluoro compound gas chemistries in ultrahigh-frequency plasma, J. Vac. Sci. Technol. A 17(5), 2551–2556(1999).
S. Karecki, L. Pruette, and R. Reif, Use of novel hydrofluorocarbon and iodofluorocarbon chemistries for a high aspect ratio etch in a high density plasma, J. Electrochem. Soc. 145(12), 4305–4312 (1998).
A. Misra, J. Sees, L. Hall, R. A. Levy, V. B. Zaitsev, K. Aryusook, C. Ravindranath, V. Sigal, S. Kesari, and D. Rufin, Plasma etching of dielectric films using the non-global-warming gas CF3I, Mater. Lett. 34, 415–419(1998).
E. Illenberger, in: Linking the Gaseous and Condensed Phases of Matter - The Behavior of Slow Electrons, edited by L. G. Christophorou, E. Illenberger, and W. F. Schmidt (Plenum Press, New York, 1994).
J. E. Fieberg, A. Szabo, and J. M. White, Electron-stimulated chemistry of CF3I adsorbed on Ag(l11): C-F bond cleavage and C-C coupling, J. Chem. Soc, Faraday Trans. 92(23), 4739–4748 (1996).
M. B. Jensen and P. A. Thiel, Thermally-induced and electron-induced chemistry of CF3I on Ni(l00), J. Am. Chem. Soc. 117(1), 438–445 (1995).
G. D. Cooper, J. E. Sanabia, J. Orloff, and J. H. Moore, Electron-stimulated desorption from the products ofchemisorption of trifluorochloroethene on silicon, Int. J. Mass Spec, (in press).
J. L. Lin and J. T. Yates, Thermal-reactions of fluorocarbon and hydrofluorocarbon species on Si(l00)-(2x1) - CF3I, CF3CH2I, and C2F4,J. Vac. Sci. Technol. A 13(2), 178–182 (1995).
J. T. Yates, Experimental Innovations in Surface Science (Springer Verlag, 1997).
H. F. Winters, The role of chemisorption in plasma etching, J. Appl. Phys. 49(10), 5165–5170 (1978).
A. Szabo, S. E. Converse, S. R. Whaley, and J. M. White, Thermal chemistry of CF3I on Ag(l11): a TPD and RAIRS Study, Surf Sci. 364(3), 345–366 (1996).
M. B. Jensen, J. S. Dyer, W. Y. Leung, and P. A. Thiel, An electron-stimulated desorption ion angular distribution and low-energy electron diffraction investigation of CF3I on Ru(00l), Langmuir 12(14), 3472–3480(1996).
M. B. Jensen, U. Myler, C. J. Jenks, P. A. Thiel, E. D. Pylant, and J. M. White, Reactivity and structure of CF3I on Ru(00l), J. Phys. Chem. 99(21), 8736–8744 (1995).
K. B. Myli and V. H. Grassian, Reaction of trifluoromethyl iodide on Ni(l00), J. Phys. Chem. 99(5), 1498–1504(1995).
K. B. Myli and V. H. Grassian, Adsorption and reaction of trifluoromethyl iodide on Ni(lll), J. Phys. Chem. 99(15);5581–5587(1995).
H. Lüth,Surfaces and Interfaces of Solids (Springer- Verlag, Berlin, 1993).
S. Joyce, J. G. Langan, and J. I. Steinfeld, Chemisorption of fluorocarbon free-radicals on silicon and Si02, J. Chem. Phys. 88(3), 2027–2032 (1988).
M. J. Bozack, M. J. Dresser, W. J. Choyke, P. A. Taylor, and J. T. Yates, Jr., Si-F bond directions on Si(l00) - A study by ESDIAD, Surf. Sci. 184, L332–L338 (1987).
D. Menzel and R. Gomer, Desorption from metal surfaces by low-energy electrons, J. Chem. Phys. 41(11), 3311(1964).
P. A. Redhead, Interaction of slow electrons with chemisorbed oxygen, Can. J. Phys. 42, 886 (1964).
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Sanabia, J.E., Moore, J.H. (2001). Chemisorbed CF3I on a Silicon Surface. In: Christophorou, L.G., Olthoff, J.K. (eds) Gaseous Dielectrics IX. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0583-9_16
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DOI: https://doi.org/10.1007/978-1-4615-0583-9_16
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