Abstract
The discussion of removal rate, surface topography, chemical composition, and structural analysis in the previous chapters has been used to develop a physically-based conceptual model for low-κ CMP. The model assumes an altered-layer surface mechanism approach to represent the CMP of BCB, SiLK, and OSG materials and provide a generic understanding of the CMP proce ss for other materials. The model also assumes a desirable low-κ CMP process where atomic-scale smoothness is achieved through an appropriate chemical-mechanical balance. The model does not account for deviations from an ideal CMP process, i.e. defect types such as scratching or peeling of the softer low-κ materials. Experimental results using SiLK polymer have been used to test and validate the basic approach and the model mechanism as an adequate representation of the complex CMP process.
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Borst, C.L., Gill, W.N., Gutmann, R.J. (2002). Low-κ CMP Model Based on Surface Kinetics. In: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-1165-6_6
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DOI: https://doi.org/10.1007/978-1-4615-1165-6_6
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