Abstract
The basic features of photostimulated epitaxy have been reviewed [1]. It has been demonstrated that the crystallization rates of epitaxial films during irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.
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Maksimovskii, S.N., Sidorov, P.P. (1993). Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Films. In: Givargizov, E.I., Grinberg, S.A. (eds) Growth of Crystals. Growth of Crystals, vol 19. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2379-6_3
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