Abstract
Over the last decade, an extensive effort has been made to explore the physics of quantum well (QW) structures due to their potential applications for opto-electronic devices. The main catalysts of the rapid development in this field have been the progress of molecular beam epitaxy (MBE) technology which allows for the fabrication of ultra thin semiconductor epitaxial layers where the thickness and the relative concentration of the layers can be precisely controled. A typical QW structure consists of a GaAs epitaxial layer sandwiched between two wider band gap AlxGa1-xAs layers. In such a structure the carriers are confined to the thin GaAs layer which is typically of the order of 100 Å.
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Sa’ar, A., Kuze, N., Feng, J., Grave, I., Yariv, A. (1992). Third Order Intersubband Kerr Effect in GaAs/AlGaAs Quantum Wells. In: Rosencher, E., Vinter, B., Levine, B. (eds) Intersubband Transitions in Quantum Wells. NATO ASI Series, vol 288. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3346-7_18
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DOI: https://doi.org/10.1007/978-1-4615-3346-7_18
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