Abstract
In this paper, we study the internal photoemission response of asymmetrical metal-Si-metal heterostructures. The photoresponse of these structures results from the combination of both hole and electron photoemission from one metallic “quantum well” above the trapezoidal potential barrier formed by the intermediate Si layer towards the second metallic film. Due to the asymmetry of the potential barrier between the wells (when metals with different Schottky barrier heights on Si are used), the phototoemission response can be strongly modified when a bias is applied between the two metallic electrodes. Using the Pt/Si/ErSi1.7 system, we show that the cutoff wavelength is shifted from 1.4 μm to above 5 μm and that the quantum efficiency is increased up to 5% at 1.2 μm wavelength when a positive bias of a few hundred mV is applied to the front Pt electrode. We will discuss the principles and behavior of this system, which give new insight in the physics of hot carriers transport in Si and briefly discuss the perspective for the improvement of these new “tunable internal photoemission sensors”.
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Badoz, P.A., Pahun, L., Campidelli, Y., d’Avitaya, F.A. (1992). Internal Photoemission of Asymmetrical Pt/Si/ErSi1.7 Heterostructures with Tunable Cutoff Wavelength. In: Rosencher, E., Vinter, B., Levine, B. (eds) Intersubband Transitions in Quantum Wells. NATO ASI Series, vol 288. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3346-7_22
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DOI: https://doi.org/10.1007/978-1-4615-3346-7_22
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