Abstract
In order to achieve conductivity control of widegap II–VI compounds, such as ZnS, ZnSe and ZnTe, many attempts to grow and dope epilayers with several kinds of dopants have been undertaken by low-temperature epitaxy. As discussed in other chapters in this book, molecular beam epitaxy (MBE) and metal–organic vapour phase epitaxy (MOVPE) are typical and promising low-temperature epitaxy methods even for II–VI compounds, as well as for III–V compounds.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Veuhoff, E., Pletschen, W., Balk, P. and Luth H. (1981) J. Cryst. Growth, 55, 30.
Morris, F.J. and Fukui, H. (1974) J. Vac. Sci. Technol., 11, 506.
Panish, M.B. and Sumski, S. (1984) J. Appl. Phys., 55, 3571.
Yoshida, S., Misawa, S. and Itoh, A. (1975) Appl. Phys. Lett., 26, 461.
Tsang, W.T. (1987) J. Cryst. Growth, 81, 261.
Ando, H., Taike, A., Kimura, R., Konagai, M. and Takahashi, K. (1986) Jpn. J. Appl. Phys., 25, L279.
Ando, H., Taike, A., Konagai, M. and Takahashi, K. (1987) J. Appl. Phys., 62, 1251.
Oniyama, H., Yamaga, S., Yoshikawa, A. and Kasai, H. (1988) J. Cryst. Growth, 93, 679.
Yoshikawa, A., Oniyama, H., Yasuda, H., Yamaga, S. and Kasai, H. (1989) J. Cryst. Growth, 94, 69.
Yoshikawa, A., Oniyama, H., Yamaga, S. and Kasai, H. (1989) J. Cryst. Growth, 95, 572.
Kobayashi, N., Shinoda, Y. and Kpobayashi, Y. (1988) Jpn. J. Appl. Phys., 27, L1728.
Kobayashi, N. (1988) Jpn. J. Appl. Phys., 27, L1597.
Migita, M., Taike, A., Shiiki, M. and Yamamoto, H. (1990) J. Cryst. Growth, 101, 835.
Taike, A., Migita, M. and Yamamoto, H. (1990) App. Phys. Lett., 56, 1989.
Kaneda, S., Satou, S., Setoyama, T., Motoyama, S., Yokoyama, M. and Ota, N. (1985) Extended Abstracts of the 17th Conference on Solid State Devices and Materials, Tokyo, p. 225.
Kaneda, S., Satou, S., Setoyama, T., Motoyama, S., Yokoyama, M. and Ota, N. (1986) J. Cryst. Growth, 76, 440.
Teraguchi, N., Takemura, Y., Kimura, R., Konagai, M. and Takahashi, K. (1988) Cryst. Growth, 93, 720.
Yoshikawa, A., Okamoto, T., Yasuda, H., Yamaga, S. and Kasai, H. (1990) Growth, 101, 86.
Wu, Y., Toyoda, T., Kawakami, Y., Fujita, Sz. and Fujita, Sg. (1990) Jpn. J. Appl. Phys., 29, L727.
Konagai, M., Kobayashi, M., Kimura, R. and Takahashi, K. (1988) J. Cryst. Growth, 86, 290.
Oniyama, H., Yamaga, S. and Yoshikawa, A. (1989) Jpn. J. Appl. Phys., 28, L2137.
Oniyama, H., Yamaga, S. and Yoshikawa, A. (1990) Mater. Res. Soc. Symp. Proc., 161, 187.
Nishizawa, J. and Kurabayashi, T. (1983) J. Electrochem. Soc., 130, 413.
Mullin, J.B., Irvine, S.J.C. and Ashen, D.J. (1981) J. Cryst. Growth, 55, 92.
Oniyama, H. (1990) Doctoral Thesis, Chiba University.
Ohki, A., Shibata, N., Ando, K. and Katsui, A. (1988) J. Cryst. Growth, 93, 692.
Suntola, T. (1984) Extended Abstracts of the 16th Conference on Solid State Devices and Materials, Kobe, p. 647.
Yao, T. and Takeda, T. (1986) Appl. Phys. Lett., 48, 160.
Yao, T. (1986) Jpn. J. Appl. Phys., 25, L544.
Dosho, S., Takemura, Y., Konagai, M. and Takahashi, K. (1989) J. Cryst. Growth, 95, 580.
Konagai, M., Takemura, Y., Kimura, R., Teraguchi, N. and Takahashi, K. (1990) Mater. Res. Soc. Symp. Proc., 161, 177.
Yasuda, H. (1990) Master’s Thesis, Chiba University.
Yokogawa, T., Sato, H. and Ogura, M. (1988) Appl. Phys. Lett., 52, 1678.
Mitsuhashi, H., Mitsuishi, I., Mizuta, M. and Kukimoto, H. (1985) Jpn. J. Appl. Phys., 24, L578.
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Yoshikawa, A. (1992). Metal-organic molecular beam epitaxy growth and properties of widegap II–VI compounds. In: Ruda, H.E. (eds) Widegap II–VI Compounds for Opto-electronic Applications. Electronic Materials Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3486-0_5
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3486-0_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-412-39100-2
Online ISBN: 978-1-4615-3486-0
eBook Packages: Springer Book Archive