Abstract
For a general introduction to semiconductors see the books of Markovich [1] and Mock [2]. On January 8, 1988 Michael Ward (CALTECH and IBM at Yorktown Heights) has presented some results of his thesis [3] and of joint work by Ward, Cohen and Odeh [4] on semiconductors and posed several problems. In sections 8.1, 8.2 we shall describe his presentation for the MOSFET and PNPN problems, and in section 8.3 we shall provide a solution to the problem he posed (in section 8.1).
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References
P. Markovich, The Stationary Semiconductor Device Equations, Springer-Verlag, Wien-New York 1986.
M.S. Mock, Analysis of Models of Semiconductor Devices, Boole Press, Dublin, 1983.
M. Ward, Asymptotic methods in semiconductor device modeling, Ph.D. dissertation, Caltech, Passadena, CA (1988).
M.J. Ward, D.S. Cohen and F.M. Odeh, Asymptotic methods for MOS-FET modelling, preprint.
Poluborinova Kochina, Theory of Ground Water Movement, Princeton University Press, 1962.
C. Please, An analysis of semiconductor PN junctions, IMA, 28 (1982), 301–318.
I. Rubinstein, Multiple steady states in one-dimensional electrodiffusion with local electroneutrality, SIAM J. Appl. Math., 47 (1987), 1076–1093.
A. Friedman, Variational Inequalities and Free Boundary Problems, Wiley-Interscience, New York, 1982.
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© 1988 Springer-Verlag New York Inc.
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Friedman, A. (1988). Asymptotic Methods in Semiconductor Device Modeling. In: Mathematics in Industrial Problems. The IMA Volumes in Mathematics and Its Applications, vol 16. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7399-9_9
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DOI: https://doi.org/10.1007/978-1-4615-7399-9_9
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