Abstract
Attenuated total reflection (ATR) has been used with Fourier transform infrared spectroscopy (FTIR) to study the structure and composition of SiO2 and SixOyClz thin films (thicknesses between 15 and 160 nm). The conjunction of ATR with FTIR resulted in excellent sensitivity in the spectral region between 3800 cm-1 and 1500 cm-1. The films were thermally grown on a silicon internal reflection element avoiding any prism-sample discontinuities. The hygroscopic behavior of SixOyClz films was determined by monitoring the -OH stretch band at 3650 cm-1 as a function of exposure time in a 75°C + 93% RH ambient. An HCl absorption band was identified at 2800 cm-1 which increased in intensity proportional to exposure time. Both water-created bands saturated with time. The identity of the bands was verified by deuteration shift and by comparison with the spectrum of Si02. After water saturation, spectra were collected at various etch depths which proved that water absorption occured over the entire oxide thickness. ATR-FTIR spectra were compared with secondary ion mass spectrometry (SIMS) depth profiles of similar oxy-chlorides to give a more quantitative idea of the total H content as well as another view of the H and Cl profiles.
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© 1985 Plenum Press, New York
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Koba, R., Monkowski, J.R., Tressler, R.E. (1985). The Hygroscopic Behavior of SiO2 and SixOyClz Thin Films on Si Using ATR FTIR Spectra. In: Snyder, R.L., Condrate, R.A., Johnson, P.F. (eds) Advances in Materials Characterization II. Materials Science Research, vol 19. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9439-0_23
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DOI: https://doi.org/10.1007/978-1-4615-9439-0_23
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