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Strained Layer Lasers in the InGaAs/GaAs/AlGaAs Heterostructure System

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Condensed Systems of Low Dimensionality

Part of the book series: NATO ASI Series ((NSSB,volume 253))

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Abstract

Recent developments in the technology and fundamentals of strained layer epitaxial systems have generated overwhelming interest in the exploitation of such heterostructures for optical and electronic device applications. This is in part due to the additional degrees of freedom provided for device structures to be tailored for the particular application and in many cases improved performance over what is possible with the lattice matched systems alone. For example, quantum well lasers with strained InGaAs active layers have achieved threshold currents comparable to those with GaAs channels but with much less edge losses due to the smaller surface recombination velocity in InGaAs and very stable power outputs. Reduced threshold currents and increased differential gains are expected to lead to modulation at higher frequencies.

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Author information

Authors and Affiliations

  1. Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Ill., 61801, USA

    H. Morkoç

Authors
  1. H. Morkoç
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Editor information

Editors and Affiliations

  1. University of Leicester, Leicester, UK

    J. L. Beeby

  2. University of Michigan, Ann Arbor, Michigan, USA

    P. K. Bhattacharya

  3. CNRS-PIRSEM, Paris, France

    P. Ch. Gravelle

  4. Technical University of Munich, Garching, Germany

    F. Koch

  5. National Research Council, Ottawa, Canada

    D. J. Lockwood

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© 1991 Plenum Press, New York

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Morkoç, H. (1991). Strained Layer Lasers in the InGaAs/GaAs/AlGaAs Heterostructure System. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_45

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  • DOI: https://doi.org/10.1007/978-1-4684-1348-9_45

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-1350-2

  • Online ISBN: 978-1-4684-1348-9

  • eBook Packages: Springer Book Archive

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