Abstract
The irradiation defects are usually assumed to act on impurity diffusion processes through an increase of the effective jump frequency, in a vacancy diffusion mechanism. We have shown that, at least for boron in silicon, the usual enhanced diffusion mechanism is swamped by another interaction mechanism, which causes depletion of impurity in some parts of the crystal, and accumulation elsewhere (1).
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References
P.Baruch, J.Monnier, B.Blanchard, C. Castaing, submitted to Applied Physics Letters.
G. D. Watkins, in Radiation Effects in Semiconductors, p.97 (Dunod, Paris, 1965).
D. Dieumegard, L. M. Mercandalli, M. Croset, SIMS Meeting of A.N.R.T. (Orsay, 1973; unpublished).
W. K. Hofker, H. W. Werner, D. P. Oosthoek, M. A. M. de Greft, Appl. Phys. 2, 265 (1973).
P. Baruch, J. Monnier, B. Blanchard, C. Castaing, communication at the International Conference on Defects in Semiconductors (Freiburg, July 1974), to be published by the Institute of Physics (London).
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© 1975 Plenum Press, New York
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Baruch, P., Monnier, J., Blanchard, B., Castaing, C. (1975). Redistribution of Boron in Silicon Through High Temperature Proton Irradiation. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_24
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_24
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