Abstract
Thin layers of alkali metals deposited on a GaAs(110) surface can enhance by-several orders of magnitude the oxidation kinetics of the substrate. Pure alkali oxides of different stoichiometry have been grown at 150 K on the GaAs(110) substrate, which does not react with the alkali oxides at this temperature. The spectral features of these different alkali oxides have been used to identify the oxygen species responsible for the Negative Electron Affinity activation of a Cs/O/GaAs photocathode, as well as the reaction products of the alkali-promoted oxidation of the GaAs(110) surface.
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© 1991 Plenum Press, New York
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Ortega, J.E., Miranda, R. (1991). Importance of Surface Chemistry/Catalysis in the Processing of Semiconductors. In: Brongersma, H.H., van Santen, R.A. (eds) Fundamental Aspects of Heterogeneous Catalysis Studied by Particle Beams. NATO ASI Series, vol 265. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5964-7_4
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DOI: https://doi.org/10.1007/978-1-4684-5964-7_4
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