Abstract
Semiconductor growth techniques have advanced to the point where layered structures can be accurately produced with sharp-edged potential energy steps that have widths comparable to the de Broglie wavelength of energetic electrons. Such structures are ideal for studying and exploiting the physics of electron tunneling in semiconductors. A wide range of potential energy profiles can be designed and implemented to facilitate the investigation of fundamental problems such as the time taken to tunnel, and the possible influences of scattering events on tunneling.
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© 1990 Plenum Press, New York
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Young, J.F., Wood, B.M., Charbonneau, S. (1990). Optical Probes of Resonant Tunneling Structures. In: Chamberlain, J.M., Eaves, L., Portal, JC. (eds) Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 231. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7412-1_19
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DOI: https://doi.org/10.1007/978-1-4684-7412-1_19
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