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Behavior of Impurities in Heavily Doped Semiconductors

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Heavily Doped Semiconductors

Part of the book series: Monographs in Semiconductor Physics ((MOSEPH,volume 1))

Abstract

In the majority of cases with which semiconductor physics is concerned, the crystals contain relatively few impurities, which are separated by fairly large distances so that the interaction between them can be neglected, at least in the first approximation. In the heavy doping case, we must allow for the interaction between the impurities themselves, between the impurities and the host atoms, and between the impurities and the structure defects.

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Authors and Affiliations

  1. Institute for Fine Chemical Technology, Academy of Sciences of the USSR, Moscow, USSR

    Victor I. Fistul’

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  1. Victor I. Fistul’
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© 1969 Plenum Press

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Fistul’, V.I. (1969). Behavior of Impurities in Heavily Doped Semiconductors. In: Heavily Doped Semiconductors. Monographs in Semiconductor Physics, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8821-0_6

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  • DOI: https://doi.org/10.1007/978-1-4684-8821-0_6

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-8823-4

  • Online ISBN: 978-1-4684-8821-0

  • eBook Packages: Springer Book Archive

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