Abstract
Recently, the gap between experimentally and theoretically accessible [001] (GaAs)n-(AlAs)n superlattices has been bridged. Following the pioneering work of Ishibashy et al., 1 several 2–5 (GaAs)n-(AlAs)n superlattices of high quality have been grown and characterized down to n = 1. Initiated by the LMTO calculation of Christensen et al. 6 for the (GaAs)1-(A1As)1 superlattice, ab-initio bandstructure methods have been applied to these superlattices up to n = 4. 7–11
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References
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© 1989 Plenum Press, New York
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Eppenga, R., Schuurmans, M.F.H. (1989). AB-Initio Calculated Optical Properties of [001] (GaAs)n-(AlAs)n Superlattices. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_30
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DOI: https://doi.org/10.1007/978-1-4757-0770-0_30
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