Abstract
A hydrogen-like acceptor model is used to calculate the rate of radiative transitions of electrons from the conduction band to acceptor levels in indium arsenide. This rate is compared with the rate of band—band radiative transitions. It is shown that the transitions from the conduction band to acceptor levels should predominate in InAs laser diodes, but in the case of strong excitation of a pure sample, the band—band transitions should be dominant.
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© 1971 Springer Science+Business Media New York
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Baryshev, N.S. (1971). Radiative Transitions in InAs Laser Diodes. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_27
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_27
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
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