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Flux-Method Calculations of the Characteristics of Semiconductor Devices Having an Electric Field in the Base Region

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Physics of p-n Junctions and Semiconductor Devices

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Abstract

A method is proposed for using the flux equations to calculate the characteristics of drift transistors. The transport factor of a drift-transistor base is calculated for exponential and actual impurity distributions in the base. It is shown that the allowance for the actual field distribution in the base, especially the retarding section, has a considerable effect on the results. For sufficiently long lifetimes, the results given by the flux method agree exactly with those obtained by solution of the diffusion equations, but the fluxmethod results are more rigorous for short lifetimes.

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Literature Cited

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Authors
  1. I. M. Beskrovnyi
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Editors and Affiliations

  1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

    S. M. Ryvkin  & Yu. V. Shmartsev  & 

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© 1971 Springer Science+Business Media New York

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Beskrovnyi, I.M. (1971). Flux-Method Calculations of the Characteristics of Semiconductor Devices Having an Electric Field in the Base Region. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_56

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  • DOI: https://doi.org/10.1007/978-1-4757-1232-2_56

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1234-6

  • Online ISBN: 978-1-4757-1232-2

  • eBook Packages: Springer Book Archive

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