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Mechanisms in Vapour Epitaxy of Semiconductors

  • Chapter
Crystal Growth

Abstract

Epitaxial growth may be achieved by a variety of techniques, e.g. solution, flux, gel, molecular beam, and vapour. Vapour phase growth is by far the most widely used technique for semiconductors. It consists of oriented crystal growth of a material transported from the gas phase onto a suitable solid substrate. Strictly speaking, vapour phase growth should refer to growth due to condensation of the material from its own vapours, as in an evaporation-condensation process. However, the term is commonly used to describe all epitaxial growth processes involving transport from the gas phase, whether the gaseous medium actually contains vapours of the crystallizing material or simply a mixture of gaseous reactants capable of undergoing chemical conversion at the solid surface to yield the epitaxial layer. In fact, the most commonly employed techniques for semiconductor epitaxy correspond to the latter case, where a gaseous compound or combination of compounds is transported to the vicinity of the solid surface, at which point a chemical reaction occurs which results in formation and deposition of the semiconductor material. Although such a process is more correctly called gas phase epitaxy, the term vapour epitaxy is in widespread use and will be used here also.

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  1. Physical Sciences Research Laboratory, Texas Instruments Incorporated, Dallas, Texas, 75222, USA

    Don W. Shaw

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  1. Standard Telecommunication Laboratories Ltd., Harlow, Essex, UK

    C. H. L. Goodman

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Shaw, D.W. (1974). Mechanisms in Vapour Epitaxy of Semiconductors. In: Goodman, C.H.L. (eds) Crystal Growth. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1272-8_1

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  • DOI: https://doi.org/10.1007/978-1-4757-1272-8_1

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