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Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements

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Nondestructive Evaluation of Semiconductor Materials and Devices

Part of the book series: NATO Advanced Study Institutes Series ((NSSB,volume 46))

Abstract

One of the well-established procedures used for a quantitative evaluation of the electrical properties of semiconductors is the measurement of their resistivity. Modern technological processes, particularly those concerned with manufacturing of semiconductor devices and integrated circuits require that such measurements be made not only of the spatial average of macroscopic specimens but also of localized microscopic fluctuations in their resistivity.

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Author information

Authors and Affiliations

  1. Electronic Material Sciences Division, Naval Ocean Systems Center, San Diego, CA, 92152, USA

    H. H. Weider

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  1. H. H. Weider
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Editor information

Editors and Affiliations

  1. The University of Pennsylvania, Philadelphia, Pennsylvania, USA

    Jay N. Zemel

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© 1979 Springer Science+Business Media New York

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Weider, H.H. (1979). Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements. In: Zemel, J.N. (eds) Nondestructive Evaluation of Semiconductor Materials and Devices. NATO Advanced Study Institutes Series, vol 46. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1352-7_2

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  • DOI: https://doi.org/10.1007/978-1-4757-1352-7_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1354-1

  • Online ISBN: 978-1-4757-1352-7

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