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MOCVD-Grown Atomic Layer Superlattices

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Spectroscopy of Semiconductor Microstructures

Part of the book series: NATO ASI Series ((NSSB,volume 206))

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Abstract

We have grown atomic layer superlattices, i.e., ultrathin-layer superlattices and double delta-doped structures, based on metalorganic chemical vapor deposition. The (AlAs)m(GaAs)n ultrathin layer superlattices have been characterized by photoluminescence and Raman scattering experiment. The ultrathinlayer superlattice is revealed to be a system of quasi-three dimensional electrons and quasi-two dimensional LO phonons. The lowest conduction band in the superlattice is indicated to be a zone-folding-induced mixed-state of X and Γ bands. An idea of the isotope superlattices is proposed. We have used the double delta-doped structure to fabricate nano-structure devices with the aid of electron-beam-induced resist process, demonstrating a potential interest of universal field-effect-transistor.

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Authors and Affiliations

  1. SONY Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan

    Akira Ishibashi

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  1. Akira Ishibashi
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Editors and Affiliations

  1. University of Cambridge, Cambridge, UK

    Gerhard Fasol

  2. International School for Advanced Studies (SISSA), Trieste, Italy

    Annalisa Fasolino

  3. University of Rome II, Rome, Italy

    Paolo Lugli

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Ishibashi, A. (1989). MOCVD-Grown Atomic Layer Superlattices. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_2

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  • DOI: https://doi.org/10.1007/978-1-4757-6565-6_2

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