Abstract
A brief outline is presented on recent developments in defect characterization and identification in semiconductors which have been made possible by the application of methods other than junction space charge techniques (JSCT). Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail. Si/Ge is taken as an example to show how JSCT can be used for the study of low-dimensional structures.
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Grimmeiss, H.G., Kleverman, M., Olajos, J., Omling, P., Nagesh, V. (1991). Impurities in Semiconductors. In: Peaker, A.R., Grimmeiss, H.G. (eds) Low-Dimensional Structures in Semiconductors. NATO ASI Series, vol 281. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0623-6_2
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DOI: https://doi.org/10.1007/978-1-4899-0623-6_2
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