Abstract
In this paper, we report a new silicon oxidation method, at least one order magnitude higher in oxide growth rate can be achieved by only addition of a few thousand PPM HF to the pure oxygen gas. After rapid HF doped oxidation and subsequent annealing at low temperature (800°C) in pure oxygen, high quality gate oxide for VLSI can be obtained, which exhibits a tight distribution in thickness and breakdown voltage measurements leading to a defect densities about 2/cm2, and intrinsic breakdown events more than 99%. The interface charge densities are very low, and the Si/SiO2 interfaces are nearly atomically flat as revealed by HREM at 200K magnification. These superior properties of the SiO2 thin films would very promise for VLSI application.
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© 1988 Springer Science+Business Media New York
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Wei, L., Yuan-sen, X., Yang-shu, Z. (1988). A Novel Silicon Oxidation Method — HF Enhanced Oxidation. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_11
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_11
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-0776-9
Online ISBN: 978-1-4899-0774-5
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