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Part of the book series: NATO ASI Series ((NSSB,volume 136))

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Abstract

Recent advances based on the coherent potential approximation and the potential well analogy suggest that, in spite of the great complexity of the potential felt by an electron moving in an amorphous semiconductor, the electronic structure of the latter possesses a certain universality. As a result (and to a first approximation) only a few parameters matter. The situation is analoguous to that of a crystalline semiconductor, where a single quantity — the effective mass — allows one to bypass the complexity of the crystalline potential.

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References

  1. See, e. g., E.N. Economou, “Green’s Function in Quantum Physics”, Springer-Verlag, Heidelberg, (1983).

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© 1986 Springer Science+Business Media New York

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Economou, E.N. (1986). Electronic Structure of α-SiH. In: Bambakidis, G., Bowman, R.C. (eds) Hydrogen in Disordered and Amorphous Solids. NATO ASI Series, vol 136. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2025-6_2

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  • DOI: https://doi.org/10.1007/978-1-4899-2025-6_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2027-0

  • Online ISBN: 978-1-4899-2025-6

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