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Helium Defect Interactions in Metals and Silicon

  • Chapter
Fundamental Aspects of Inert Gases in Solids

Part of the book series: NATO ASI Series ((NSSB,volume 279))

Abstract

An overview is given of the results obtained with Thermal Helium Desorption Spectrometry (THDS) and other techniques on the interaction of helium with defects in metals and silicon. The majority of results concerning point defects and small defect complexes in this overview have been obtained by THDS. TEM observations have been used as a complementary technique to determine the morphology of the microscopically visible helium defect complexes. Atomistic defect simulations e.g. by the Embedded Atom method or by the Many Body Potential approach have been used to provide theoretical support THDS studies were originally devoted to defects in metals only, but are now applied also to silicon and ceramics. Helium interactions with defects in silicon differ considerably from those obtained for metals. Entropy effects seem to play an important role.

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Author information

Authors and Affiliations

  1. Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, Nl 2629JB, Delft, The Netherlands

    A. van Veen

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  1. A. van Veen
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Editor information

Editors and Affiliations

  1. The University of Salford, Salford, UK

    S. E. Donnelly

  2. AEA Technology, Harwell, UK

    J. H. Evans

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© 1991 Springer Science+Business Media New York

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van Veen, A. (1991). Helium Defect Interactions in Metals and Silicon. In: Donnelly, S.E., Evans, J.H. (eds) Fundamental Aspects of Inert Gases in Solids. NATO ASI Series, vol 279. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3680-6_4

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  • DOI: https://doi.org/10.1007/978-1-4899-3680-6_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-3682-0

  • Online ISBN: 978-1-4899-3680-6

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