Abstract
Section 8.1 summarizes and concludes the content and results of this book. All proposed and implemented converters of this book are compared to the state-of-the-art in Sect. 8.2. In Sect. 8.3, an outlook describes possibilities and requirements on how high-V in multi-MHz converters can be further improved.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Han SW, Park SH, Kim HS, Jo MG, Cha HY (2017) Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver. Electron Lett 53:198–199. https://doi.org/10.1049/el.2016.2813. https://ieeexplore.ieee.org/document/7843829/
Lau JH (2011) Evolution, challenge, and outlook of TSV, 3D IC integration and 3D silicon integration. In: 2011 International symposium on advanced packaging materials (APM), pp 462–488. https://doi.org/10.1109/ISAPM.2011.6105753
Mehrotra V, Arias A, Neft C, Bergman J, Urteaga M, Brar B (2016) GaN HEMT-based >1-GHz speed low-side gate driver and switch monolithic process for 865-MHz power conversion applications. IEEE J Emerg Sel Topics Power Electron 4:918–925. https://doi.org/10.1109/JESTPE.2016.2564946. https://ieeexplore.ieee.org/document/7469808/
Moench S, Kallfass I, Reiner R, Weiss B, Waltereit P, Quay R, Ambacher O (2016) Single-input GaN gate driver based on depletion-mode logic integrated with a 600V GaN-on-Si power transistor. In: 2016 IEEE 4th workshop on wide bandgap power devices and applications (WiPDA), pp 204–209. https://doi.org/10.1109/WiPDA.2016.7799938. https://ieeexplore.ieee.org/document/7799938/
Reiner R, Waltereit P, Weiss B, Moench S, Wespel M, Müller S, Quay R, Ambacher O (2018) Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology. IET Power Electron 11:681–688. https://doi.org/10.1049/iet-pel.2017.0397. https://ieeexplore.ieee.org/document/8338223/
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this chapter
Cite this chapter
Wittmann, J. (2020). Conclusion and Outlook. In: Integrated High-Vin Multi-MHz Converters. Springer, Cham. https://doi.org/10.1007/978-3-030-25257-1_8
Download citation
DOI: https://doi.org/10.1007/978-3-030-25257-1_8
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-25256-4
Online ISBN: 978-3-030-25257-1
eBook Packages: EngineeringEngineering (R0)