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Low Pressure Chemical Vapor Deposition

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

This chapter reviews the growth and material characterization of β-Ga2O3 grown via the low pressure chemical vapor deposition (LPCVD) method. The growth of β-Ga2O3 thin films , with Si as a demonstrated effective and controllable n-type dopant, on off-axis c-sapphire and native Ga2O3 substrates are discussed. LPCVD growth of β-Ga2O3 rod structures on 3C-SiC substrates is also discussed. From the crystal structural characterization and electron transport measurements, LPCVD -grown β-Ga2O3 materials exhibit high quality with great promises for high power electronic and short-wavelength optoelectronic device applications.

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Acknowledgements

The work was supported by grants from US National Science Foundation (DMR-1755479, Dr. T. Paskova) and the Air Force Office of Scientific Research No. FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir).

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Authors and Affiliations

  1. 205 Dreese Laboratory, Department of Electrical and Computer Engineering, Department of Materials Science and Engineering, The Ohio State University, 2015 Neil Ave., Columbus, OH, 43210, USA

    Hongping Zhao

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  1. Hongping Zhao
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Correspondence to Hongping Zhao .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Zhao, H. (2020). Low Pressure Chemical Vapor Deposition. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_16

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