Abstract
Semiconductor processing technology, which is the basis of the modern microelectronic revolution, has seen a tremendous increase in complexity in the last decade. This has lead to an exponential growth in the necessary investment of time and money to develop new generations of Integrated Circuits and to provide the equipment to manufacture them. For instance the investment to build a future 64 Mbit DRAM manufacturing line with 0.35 μm minimum feature size is estimated to be in the order of 1 billion US $. Most of the cost stems from the development and production of the equipment needed to manufacture the integrated circuits, such as optical projection steppers, CVD reactors, reactive ion etchers, ion implanters etc..
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© 1993 Springer Basel AG
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Kleijn, C.R., Werner, C. (1993). Introduction. In: Modeling of Chemical Vapor Deposition of Tungsten Films. Progress in Numerical Simulation for Microelectronics. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-7741-1_2
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DOI: https://doi.org/10.1007/978-3-0348-7741-1_2
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