Abstract
For SiO2 pMOSFETs, the reaction diffusion model is well used to describe the NBTI degradation theoretically and the Ogawa model for hole trap generation is known exper imentally. However, there is not a good model of NBTI degradation for SiON devices. In this paper, we propose a nitrogen dependent hole trap generation model by extending these two models and present the NBTI degradation model for SiON pMOSFETs.
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© 2007 Springer-Verlag Wien
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Shimokawa, J., Enda, T., Aoki, N., Tanimoto, H., Ito, S., Toyoshima, Y. (2007). Modeling of NBTI Degradation for SiON pMOSFET. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_34
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DOI: https://doi.org/10.1007/978-3-211-72861-1_34
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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