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Effect of Growth Temperature on Properties of CdZnO Thin Films

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300 to 600 °C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV–Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature.

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Authors and Affiliations

  1. Indian Institute of Technology, Indore, Madhya Pradesh, India

    Shruti Verma, Sushil K. Pandey & Shaibal Mukherjee

  2. UGC-DAE Consortium for Scientific Research, DAVV, Indore, India

    Mukul Gupta

Authors
  1. Shruti Verma
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  2. Sushil K. Pandey
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  3. Mukul Gupta
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  4. Shaibal Mukherjee
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Corresponding author

Correspondence to Shaibal Mukherjee .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Verma, S., Pandey, S.K., Gupta, M., Mukherjee, S. (2014). Effect of Growth Temperature on Properties of CdZnO Thin Films. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_222

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