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Effect of Junction Temperature on the Microwave Properties of IMPATT Diodes

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

The microwave characteristics, with respect to two different operating junction temperatures, are simulated for the IMPATT diodes based on Si, GaAs and 4H-SiC semiconductor material. With the rise in junction temperature, a general trend of decrease in device efficiency and increase in device negative conductance are observed for all the diodes under consideration. It is also interesting to note that noise measure reduces significantly with rise in junction temperature.

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Authors and Affiliations

  1. School of Physics, Sambalpur University, Sambalpur, Odisha, India

    J. Pradhan, S. K. Swain & G. N. Dash

  2. Apex Institute of Technology and Management, Bhubaneswar, Odisha, India

    S. R. Pattanaik

Authors
  1. J. Pradhan
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  2. S. R. Pattanaik
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  3. S. K. Swain
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  4. G. N. Dash
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Corresponding author

Correspondence to J. Pradhan .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Pradhan, J., Pattanaik, S.R., Swain, S.K., Dash, G.N. (2014). Effect of Junction Temperature on the Microwave Properties of IMPATT Diodes. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_23

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