Abstract
The component elements of the field-effect transistors can be grouped into two distinct categories. Extrinsic elements represent different access structures such as parasitic resistances R s and R d. Among the intrinsic elements, the transconductance g m is cited, which reflects by its nature the localized behavior of the physical structure of the transistors. The transconductance g m represents the control mechanism of the transistor; it is the variation of the drain current I ds depending on the gate voltage for a constant drain voltage. In this work, we studied:
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Draidi, M., Zaabat, M., Boudine, A. (2015). Influence of Physical Parameters on the Transconductance g m of Channel for the Component Submicron. In: Fesenko, O., Yatsenko, L. (eds) Nanocomposites, Nanophotonics, Nanobiotechnology, and Applications. Springer Proceedings in Physics, vol 156. Springer, Cham. https://doi.org/10.1007/978-3-319-06611-0_25
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DOI: https://doi.org/10.1007/978-3-319-06611-0_25
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