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Non-volatile Memory of New Generation and Ultrafast IR Modulators Based on Graphene on Ferroelectric Substrate

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Part of the book series: Engineering Materials ((ENG.MAT.))

Abstract

A review of recent achievements in graphene-on-ferroelectric systems is presented. These systems have several unique features. Among them are: the possibility to obtain the high carrier concentration (~1012 cm−2) for the moderate gate voltages (of ~1 V) and the existence of hysteresis (or anti-hysteresis) in the dependence of the graphene channel resistance on the gate voltage. The use of ferroelectric substrates for graphene had enabled the construction of the robust elements of non-volatile memory of new generation. These elements operate for more than 105 switches and preserve information for more than 1000 s. Graphene-on-ferroelectric systems can be characterized theoretically by the ultrafast rate of switching (~10–100 fs). It was also demonstrated theoretically, that the effective, fast and small modulators of the middle- and near-IR radiation for different optoelectronic applications can be constructed on the base of graphene on the Pb(ZrxTi1−x)O3 ferroelectric substrate.

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Acknowledgments

This work was supported by State Fundamental Research Fund of Ukraine (Grant 53.2/006).

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Authors and Affiliations

  1. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Nauky Ave., 41, Kyiv-28, 03650, Ukraine

    Maksym V. Strikha

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  1. Maksym V. Strikha
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Correspondence to Maksym V. Strikha .

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Editors and Affiliations

  1. National Academy of Science of Ukraine, Lashkaryov Institute of Semiconductor Physics, Kyiv, Ukraine

    Alexei Nazarov

  2. Sinano InstituteIMEP-LAHC, CNRS Grenoble, IMEP-LAHC, Grenoble, France

    Francis Balestra

  3. ICTEAM Institute Microelectronics Laboratory, Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Valeriya Kilchytska

  4. ICTEAM Institute, ELEN (Electrical Engineering), Université catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

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Strikha, M.V. (2014). Non-volatile Memory of New Generation and Ultrafast IR Modulators Based on Graphene on Ferroelectric Substrate. In: Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D. (eds) Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Engineering Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-08804-4_9

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