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The Energy Driven Hot Carrier Model

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Hot Carrier Degradation in Semiconductor Devices

Abstract

The so-called “Energy Driven Model” for hot carrier effects in MOS devices was first proposed in 2005 as a replacement for the ubiquitous Lucky Electron Model (LEM) in the short channel regime (especially at or below the 130 nm node) [1]. As MOSFET size and voltage are scaled down, the carrier energy distribution becomes increasingly dependent only on the applied bias, because of quasi-ballistic transport over the high field region. The energy driven model represents a new paradigm of MOSFET hot carrier behavior in which the fundamental driving force is available energy, rather than peak lateral electric field as it is in the LEM. The model predictions are shown to be consistent with experimental impact ionization results. Experimental hot carrier degradation results for a wide range of technologies support the concept of a nearly universal carrier energy dependent cross section of hot carrier damage (Sit).

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Authors and Affiliations

  1. State University of New York at New Paltz, New Paltz, NY, USA

    Stewart E. Rauch

  2. IBM Microelectronics, Hopewell Jct., NY, USA

    Fernando Guarin

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  1. Stewart E. Rauch
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  2. Fernando Guarin
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Correspondence to Stewart E. Rauch .

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Editors and Affiliations

  1. Institute for Microelectronics, Vienna University of Technology, Wien, Austria

    Tibor Grasser

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Rauch, S.E., Guarin, F. (2015). The Energy Driven Hot Carrier Model. In: Grasser, T. (eds) Hot Carrier Degradation in Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-08994-2_2

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  • DOI: https://doi.org/10.1007/978-3-319-08994-2_2

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-08993-5

  • Online ISBN: 978-3-319-08994-2

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