Abstract
This chapter focuses on bonding, wafer to wafer bonding, underfilling and die to die bonding with nonconductive film.
The first article introduces wafer to wafer bonding. Unlike temporary bonding in Chapter 4.3, permanent wafer bonding usually does not use glue and debonding process. Applications and known quality issues such as alignment accuracy, scaling, distortion, bonding strength and void are discussed.
Second article deals with underfill material. Two types of materials, capillary underfill and nonconductive paste. Void and warpage are the major issues of the material. Filler size, viscosity and mechanical properties are shown to be effective to improve these issues.
Final article describes film type underfill material, nonconductive film. It is used as pre applied die interconnecting adhesive in thermal compression bonding process. Design of material properties is presented. The issues of bonding process and the improved experimental results are also introduced.
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Fusano, H., Inaba, Y., Nonaka, T. (2015). Wafer and Die Bonding Processes. In: Kondo, K., Kada, M., Takahashi, K. (eds) Three-Dimensional Integration of Semiconductors. Springer, Cham. https://doi.org/10.1007/978-3-319-18675-7_5
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DOI: https://doi.org/10.1007/978-3-319-18675-7_5
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