Bipolar Junction Transistors

Abstract

In this chapter, the transistors have been grouped into two major categories viz. Bipolar junction transistors (BJTs) and Field effect transistors (FETs). They have been further classified into p-n-p and n-p-n types; MESFET, MISFET, MODFET, MOSFET, n-channel, p-channel types etc. The details of BJTs such as their construction, fundamentals of operation, meaning and symbols of n-p-n and p-n-p are given. Forward and reverse biasing, transistor currents, circuit configurations and their characteristics are described. Comparison between CB, CE and CC configurations is presented. Amplification with different configurations of BJTs, their characteristics and uses, and phase reversal are discussed. Specifications of transistors and their terminal identifications are given. Meanings of cascade amplifier, Debye screening length, and Kirk effect are explained. Minute insight into the various topics are given through solved numerical and theoretical examples. Review questions, numerical problems and objective type questions are also given with their answers.

Appendices

Review Questions

Numerical Problems

Objective Questions

Answers