Abstract
This gives an introduction to the spectroscopy of optoelectronic semiconductors from an experimental point of view. Thus the basic measurements, transmission and reflection, are introduced first. These techniques are then explicated, the microscopic processes that form the spectra are addressed, and the standard, mostly commercial, experimental apparatus is introduced. The topic of data analysis is discussed and the link to the optical constants (dielectric function) is addressed. Additionally, techniques are introduced which are derived from the basics such as photoreflection, ellipsometry, and several kinds of mapping techniques.
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Notes
- 1.
The hh-exciton binding energy (Exciton Rydberg) in bulk GaAs is E x ~ 4–5 meV. In GaAs-based QWs, typical values are on the order of E x ~ 10 meV.
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Jimenez, J., Tomm, J.W. (2016). Basics of Optical Spectroscopy: Transmission and Reflection Measurements, Their Analysis, and Related Techniques. In: Spectroscopic Analysis of Optoelectronic Semiconductors. Springer Series in Optical Sciences, vol 202. Springer, Cham. https://doi.org/10.1007/978-3-319-42349-4_2
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