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References
Baburske, R., Heinze, B., Lutz, J., Niedernostheide, F.J.: Charge-carrier plasma dynamics during the reverse-recovery period in p+-n–n+ diodes. IEEE Trans. Electron Device ED-55(8), 2164–2172 (2008)
Baburske, R., Lutz, J., Schulze, H.-J., Siemieniec, R., Felsl, H.P.: A new Diode Structure with Inverse Injection Dependency of Emitter Efficiency (IDEE), Proceedings of the ISPSD Hiroshima, p 165–168 (2010)
Baliga, B.J.: Modern Power Devices. Wiley, New York (1987)
Baliga, B.J.: Power devices. In: Sze, S.M. (ed.) Modern Semiconductor Device Physics, Wiley, New York (1998)
Bartsch, W., Thomas, B., Mitlehner, H., Bloecher, B., Gediga, S.: SiC-powerdiodes: design and performance. Proceedings European Conference on Power Electronics and Applications EPE (2007)
Benda, H.J., Spenke, E.: Reverse recovery process in silicon power rectifiers. Proc. IEEE, 55(8) (1967)
Chen M, Lutz J, Domeij M, Felsl HP, Schulze, HJ: A novel diode structure with Controlled Injection of Backside Holes (CIBH). Proceedings of the ISPSD, Neaples. pp. 9–12 (2006)
Cooper, R.N.: An investigation of recombination in Gold-doped pin rectifiers. Solid-State Electron. 26, 217–226 (1983)
Deboy, G., et al.: Absolute measurement of carrier concentration and temperature gradients in power semiconductor devices by internal IR-Laser deflection. Microelectron. Eng. 31, 299–307 (1996)
Drücke, D., Silber, D.: Power Diodes with Active Control of Emitter Efficiency. Proceedings of the ISPSD, Osaka, pp. 231–234 (2001)
Drücke, D.: Neue Emitterkonzepte für Hochspannungsschalter und deren Anwendung in der Leistungselektronik, Dissertation, Bremen (2003)
Felsl, H.P., Falck, E., Pfaffenlehner, M., Lutz, J.: The influence of bulk parameters on the switching behavior of FWDs for traction application. Proceedings Miel 2004, Niš/Serbia & Montenegro (2004)
Felsl, H.P., Pfaffenlehner, M., Schulze, H., Biermann, J., Gutt, T.,. Schulze, H.J., Chen, M., Lutz, J.: The CIBH diode – great improvement for ruggedness and softness of high voltage diodes. ISPSD 2008, Orlando, Florida, pp. 173–176 (2008)
Hall, R.N.: Power rectifiers and transistors. Proc IRE 40, 1512–1518 (1952)
Huang, Q.: MOS-Controlled Diode – A New Class of Fast Switching Low Loss Power Diode” VPEC, pp. 97–105 (1994)
Huang, Q., Amaratunga, G.A.J.: MOS Controlled Diodes – A New Power Diode. Solid State Electr. 38(5), 977–980 (1995)
IXYS data sheet FMD 21–05QC (2000)
Kopta, A., Rahimo, M.: The Field Charge Extraction (FCE) Diode – A Novel Technology for Soft Recovery High Voltage Diodes. Proceedings of ISPSD Santa Barbara. pp. 83–86 (2005)
Laska, T., Lorenz, L., Mauder, A.: The Field Stop IGBT Concept with an Optimized Diode. Proceedings of the 41th PCIM, Nürnberg (2000)
Lutz, J., Scheuermann, U.: Advantages of the New Controlled Axial Lifetime Diode. Proceedings of the 28th PCIM, Nuremberg (1994)
Lutz, J., Wintrich, A.: The hybrid diode – mode of operation and application. Eur. Power Electron. Drives J. 10(2) (2000)
Lutz, J., Mauder, A.: Aktuelle Entwicklungen bei Silizium-Leistungs-dioden. ETG-Fachbericht 88, VDE-Verlag Berlin (2002)
Mourick, P.: Das Abschaltverhalten von Leistungsdioden, Dissertation, Berlin (1988)
Nemoto, M., et al.: Great improvement in IGBT turn-on characteristics with trench oxide PiN Schottky Diode. Proceedings of the ISPSD, Osaka (2001)
Schlangenotto, H., Gerlach, W.: On the effective carrier lifetime in psn-rectifiers at high injection levels. Solid-State-Electron. 12, 267–275 (1969)
Schlangenotto, H., Maeder, H.: Spatial composition and injection dependence of recombination in silicon power device structures. IEEE Trans. El. Dev. 26(3), 191–200 (1979)
Schlangenotto, H., Silber, D., Zeyfang, R.: Halbleiter-Leistungsbauelemente - Untersuchungen zur Physik und Technologie. Wiss. Ber. AEG-Telefunken 55 Nr., 1–2 (1982)
Schlangenotto, H., et al.: Improved recovery of fast power diodes with self-adjusting p emitter efficiency. IEEE El. Dev. Lett. 10, 322–324 (1989)
Shimada, Y., Kato, K., Ikeda, S., Yoshida, H.: Low input capacitance and low loss VD-MOSFET rectifier element. IEEE Trans. Electron Dev. 29(8), 1332–1334 (1982)
Silber, D., Novak, W.D., Wondrak, W., Thomas, B., Berg, H.: Improved Dynamic Properties of GTO-Thyristors and Diodes by Proton Implantation. IEDM, Washington (1985)
Advanced tcad manual. Synopsys Inc. Mountain View, CA. Available: http://www.synopsys.com (2007)
Sze, S.M.: Physics of Semiconductor Devices. Wiley, New York (1981)
Wolley, E.D., Bevaqua, S.F.: High speed, soft recovery epitaxial diodes for power inverter circuits. IEEE IAS Meeting Digest (1981)
Wondrak, W., Boos, A.: Helium implantation for lifetime control in silicon power devices. Proc. of ESSDERC 87, Bologna, pp. 649–652 (1987)
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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). pin Diodes. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_5
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