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Part of the book series: NanoScience and Technology ((NANO))

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Abstract

In DSAL, contacts (or vias) are indirectly formed through guide patterns (GPs). Thus, the integrity of GP is very important to obtain desirable contacts on a wafer. Since GP is created by traditional lithography, it may have some errors when its shape is large and complex (Shim and Shin, Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (2015), Shim, Chung and Shin, Proceedings of the International Conference on Computer Aided Design (2015)) [1, 2], which affect final contact patterns. Such limitation of GP shape calls for careful considerations in physical design. It has been also argued that conventional mask synthesis and verification for traditional lithography are obsolete in DSAL. In this context, this book has addressed problems on physical design and mask synthesis as follows.

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References

  1. S. Shim, Y. Shin, Physical design and mask optimization for directed self-assembly lithography (DSAL), in Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (2015), pp. 80–85

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  2. S. Shim, W. Chung, Y. Shin, Defect probability of directed self-assembly lithography: fast identification and post-placement optimization, in Proceedings of the International Conference on Computer Aided Design (2015), pp. 404–409

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  3. W. Chung, S. Shim, Y. Shin, Redundant via insertion in directed self-assembly lithography, in Proceedings of the Design, Automation and Test in Europe Conference and Exhibition (2016), pp. 55–60

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  4. S. Shim, W. Chung, Y. Shin, Placement Optimization for MP-DSAL Compliant Layout, in Proceedings of the International Conference on IC Design and Technology (ICICDT) (2016), pp. 1–4

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Correspondence to Seongbo Shim .

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Shim, S., Shin, Y. (2018). Summary of The Book. In: Physical Design and Mask Synthesis for Directed Self-Assembly Lithography. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-76294-4_10

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