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Part of the book series: NanoScience and Technology ((NANO))

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Abstract

In MP-DSAL, vias that are physically close are clustered to form a GP and patterned together through DSAL process; in addition, GPs that are too close are created on a wafer using different masks through MP. It should be very careful to insert redundant vias in MP-DSAL since some redundant vias may cause large and complex via clusters, whose GPs is likely to cause DSA defect; some other redundant vias may cause MP coloring conflict. This chapter addresses redundant via insertion for MP-DSAL, which aims to insert maximum number of redundant vias while all GPs are manufacturable and no MP coloring conflict occur. The problem can be formulated as ILP, which is used as a reference for comparison to a graph-based heuristic algorithm.

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Notes

  1. 1.

    Remind that via partitions are the input of each method as an input as presented in Sect. 6.2.1.

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Correspondence to Seongbo Shim .

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Shim, S., Shin, Y. (2018). Redundant Via Insertion for MP-DSAL. In: Physical Design and Mask Synthesis for Directed Self-Assembly Lithography. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-76294-4_6

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