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Circular n-p Junctions in Graphene Nanoribbons

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Physics of Quantum Rings

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Abstract

A characteristic feature of graphene as the Dirac conductor is that one can introduce doping by external voltages, so that the n-p junction can be defined and controlled by gating. The electrostatic n-p junctions in graphene act as waveguides that confine currents. The fact can be classically understood by the opposite orientation of the Lorentz force at both sides of the n-p junction, so that the carriers in both the conduction and valence band are shifted towards the junction by the external magnetic field. We describe our proposal for an Aharonov-Bohm interferometer at the n-p junction induced by the potential of the tip of an atomic force microscope. The conductance of the system exhibits Aharonov-Bohm oscillations provided that the persistent currents localized at the junction are coupled to the quantum Hall edge currents. The coupling is controlled by the Fermi energy and the tip potential. We discuss the Lorentz force effects in the system as compared to etched quantum rings in graphene and III-V semiconductors.

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Acknowledgements

This work was supported by the National Science Centre (NCN) according to decision DEC-2015/17/B/ST3/01161, by PL-Grid infrastructure and by Ministry of Science and Higher Education within the AGH University of Science and Technology statutory activity task no. 11.11.220.01.

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Authors and Affiliations

  1. AGH University of Science and Technology, Kraków, Poland

    Alina Mreńca-Kolasińska & Bartłomiej Szafran

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  1. Alina Mreńca-Kolasińska
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  2. Bartłomiej Szafran
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Correspondence to Bartłomiej Szafran .

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  1. Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Dresden, Germany

    Vladimir M. Fomin

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Mreńca-Kolasińska, A., Szafran, B. (2018). Circular n-p Junctions in Graphene Nanoribbons. In: Fomin, V. (eds) Physics of Quantum Rings. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-95159-1_18

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