Abstract
In this work, we explored the effect of antidots in phosphorene nanoribbons (PNRs) on nanoscale devices. Similar to graphene, the performance of PNRs transistor can be improved with antidots. In present work, we extensively studied the electronic and transport properties of Zigzag-PNRs antidot lattice. Transport simulation results show that the Negative Differential Resistance (NDR) region appearing for antidot device with higher current than that of ZPNRs devices without antidot. This makes the possibility to design device with enhanced transport properties to yield higher on current.
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Acknowledgements
This work was supported in parts by DST Fast track scheme for Young Scientists (SERB/F/6663/2015-16) and DST Extra Mural funding scheme(SERB/F/4240/2016-17). Authors would like to thank SERB and SASTRA University for their support.”
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Santhia Carmel, Pon, A., Ramesh, R., Bhattacharyya, A. (2019). ZigZag Phosphorene Nanoribbons Antidot—Electronic Structure and Device Application. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_2
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