Abstract
Self-assembled GaSbBi quantum dots grown on GaAs substrates by liquid phase epitaxy (LPE) technique and subjected to rapid thermal anneal (RTA) are investigated. Atomic force microscopy shows a triangular shape of the dots with most of them falling in the size ranges of 15–20, 20–25 and 35–40 nm. Photoluminescence (PL) measurements at 10K indicate three QD emission bands due to these three size bands.
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Bhowal, M.K., Das, S.C., Dhar, S. (2019). Study of Thermally Annealed GaSbBi Quantum Dots Grown on GaAs by Liquid Phase Epitaxy. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_78
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DOI: https://doi.org/10.1007/978-3-319-97604-4_78
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