Abstract
An ultra low power consuming low noise amplifier (LNA) at C-band with variable gain for adaptive antenna combining is presented in this paper. The microwave monolithic integrated circuit (MMIC) was fabricated using commercial 0.25 μm bipolar complementary metal oxide semi-conductor (BiCMOS) technology. At 5.2 GHz, a supply voltage of 1.2 V and a current consumption of only 1 mA, a maximum gain of 12.7 dB, a noise figure of 2.4 dB and a third order intercept point at the output (OIP3) of 0 dBm were measured. A large amplitude control range of 36 dB was achieved. To the knowledge of the authors, the obtained gain/supply power (S21/Pdc) figure of merit of 11dB/mW is by far the highest ever reported for silicon based C-band LNAs. The characteristics of different bias methods for amplitude control of the cascode circuit are elaborately discussed. A bias control method is proposed to significantly decrease the transmission phase variations versus gain.
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Ellinger, F. et al. (2004). BiCMOS Variable Gain LNA at C-Band with Ultra Low Power Consumption for WLAN. In: de Souza, J.N., Dini, P., Lorenz, P. (eds) Telecommunications and Networking - ICT 2004. ICT 2004. Lecture Notes in Computer Science, vol 3124. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-27824-5_117
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DOI: https://doi.org/10.1007/978-3-540-27824-5_117
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