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The R-Σ Approach to Tunnelling in Nanoscale Devices

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Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

The R-Σ method provides the time evolution of two dynamical variables extracted from a wave function, namely, the expectation value of the position and the dispersion. It overcomes the Ehrenfest approximation while keeping the Newtonian form of the equations, thus providing the basis for including quantum features into the description of the single-particle dynamics and for extending such features to the collective-transport case. Here the single-particle R-Σ equations are applied to the case of tunnelling, and the results are compared with a full-quantum calculation.

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References

  1. M. Rudan et at., A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction. Part I — Single-Particle Dynamics; Part II — Collective Transport, IEEE Tr. Nanotechnology 4, no. 5, p. 495–502 and p. 503–509.

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© 2006 Springer-Berlag Berlin Heidelberg

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Rudan, M., Marchi, A., Brunetti, R., Reggiani, S., Gnani, E. (2006). The R-Σ Approach to Tunnelling in Nanoscale Devices. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_39

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