Modulation of an Electron Beam in Optical Near-Fields

Abstract

Many kinds of electron beam devices have been developed and utilized in various scientific areas since the early 1900’s [1]. For instance, microwave amplifiers and oscillators, electron accelerators, and various types of electron microscopes have made major contributions to establish modern science and technology, such as high-speed communication, elementary particle physics, and solid-state physics. On the other hand, most of those for commercial use have been replaced by solid-state devices due to their power consumption and device size. Beam devices, however, have several advantages over solid-state devices, such as wider tuning frequency range and higher output power. Recent advances in vacuum microelectronics [2] and micromachining technology [3] provide a useful means for realizing small beam devices. In fact, electron emitters with dimensions of several microns have been fabricated through semiconductor processes [4].