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Electronic Defect States

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The Physics of Semiconductors

Part of the book series: Graduate Texts in Physics ((GTP))

Abstract

One cm3 of a semiconductor contains about 5 × 1022 atoms. It is practically impossible to achieve perfect purity. Typical low concentrations of impurity atoms are in the 1012–1013 cm−3 regime. Such a concentration corresponds to a purity of 10−10, corresponding to about one alien in the world’s human population. In the beginning of semiconductor research the semiconductors were so impure that the actual semiconducting properties could only be used inefficiently. Nowadays, thanks to large improvements in high-purity chemistry, the most common semiconductors, in particular silicon, can be made so pure that the residual impurity concentration plays no role in the physical properties. However, the most important technological step for semiconductors is doping, the controlled incorporation of impurities, in order to manage the semiconductor’s conductivity. Typical impurity concentrations used in doping are 1015–1020 cm−3. A milestone in the understanding of doping and the spreading of semiconductor technology was the 1950 textbook by Shockley [372].

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Grundmann, M. (2010). Electronic Defect States. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13884-3_7

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