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Heteroepitaxy of Nonpolar and Semipolar GaN

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GaN and ZnO-based Materials and Devices

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 156))

Abstract

There has been increasing research interest in nonpolar and semipolar GaN for high brightness light-emitting diode (LED) and laser diode applications. Due to the very limited supply of GaN bulk substrates, the feasible way of obtaining cost-effective large-areanonpolar and semipolar GaN materials in the foreseeable future is still through heteroepitaxy on foreign substrates. The major challenge in the heteroepitaxy of nonpolar and semipolar GaN is the high density of stacking faults and partial dislocations, which are responsible for the poor performance of heteroepitaxial nonpolar and semipolar LEDs. This chapter presents kinetic Wulff plots (v-plots) of GaN as a novel and powerful methodology to understand and control GaN heteroepitaxy along various crystallographic orientations. Based on the v-plots, a two-step growth scheme is rationally designed and experimentally confirmed in reducing the defect density for nonpolar and semipolar GaN heteroepitaxy on planar substrates. A defect reduction model is proposed based on the correlation between the morphological evolution and the microstructural development. With the orientation of nucleation decoupled from the final film surface orientation, orientation controlled epitaxy has been demonstrated as a very promising approach for device quality nonpolar and semipolar GaN materials. The material research timeline of nonpolar and semipolar GaN is summarized and discussed.

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Acknowledgements

This work was supported by the US DOE under Contract DE-FC26-07NT43227 and the US DOE office of Basic Energy Sciences under Contract DE-SC0001134. Christopher D. Yerino helped compiling the v-plots of GaN through consecutive SAG experiments under various growth conditions. Benjamin Leung carried out the OCE experiments for the growth of semipolar (112}2) GaN on patterned r-plane sapphire. The authors are thankful to Prof. Hyung Koun Cho and Mr. Bo Hyun Kong at Sungkyunkwan University (Korea) for their great help with the TEM measurements, and Dr. T.-S. Ko at National Chiao Tung University (Taiwan) for his help with the CL measurement.

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  1. Department of Electrical Engineering, Yale University, 15 Prospect Street, BCT 517, New Haven, CT, 06511, USA

    Qian Sun & Jung Han

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  1. , Materials Science and Engineering, University of Florida, 100 Rhines Hall, Gainesville, 32611, USA

    Stephen Pearton

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Sun, Q., Han, J. (2012). Heteroepitaxy of Nonpolar and Semipolar GaN. In: Pearton, S. (eds) GaN and ZnO-based Materials and Devices. Springer Series in Materials Science, vol 156. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23521-4_1

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