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Band Structure Engineering of Semiconductor Devices for Optical Telecommunications

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Semiconductor Modeling Techniques

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 159))

Abstract

This chapter aims to provide an introduction to the main principles of band structure engineering of semiconductor devices. We show that it is possible to modify artificially the electronic structure of semiconductor materials. The combination of strain and quantum confinement can in particular lead to great improvements of the semiconductor laser characteristics. This explains that most of the commercial semiconductor lasers and semiconductor optical amplifiers for optical telecommunications (1.3 and 1.55 \(\upmu \mathrm{ m}\)) are based on strained quantum wells.

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Authors and Affiliations

  1. Laboratoire de physique et Chimie des Nano-Objets, INSA—Université de Toulouse, 135 avenue de Rangueil, 31077, Toulouse cedex, France

    Hélène Carrère & Xavier Marie

Authors
  1. Hélène Carrère
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  2. Xavier Marie
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Correspondence to Xavier Marie .

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Editors and Affiliations

  1. , School of Computer Science and, University of Essex, Essex, CO4 3SQ, Montserrat

    Naci Balkan

  2. , Département de physique, Inst National des Sciences Appliquées, avenue de Rangueil 135, Toulouse cedex, 31077, France

    Marie Xavier

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Carrère, H., Marie, X. (2012). Band Structure Engineering of Semiconductor Devices for Optical Telecommunications. In: Balkan, N., Xavier, M. (eds) Semiconductor Modeling Techniques. Springer Series in Materials Science, vol 159. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-27512-8_6

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  • DOI: https://doi.org/10.1007/978-3-642-27512-8_6

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