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Physics and Modeling of Bipolar Junction Transistors

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High-Frequency Bipolar Transistors

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 11))

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Abstract

Physics-based compact models provide insight into the relations between the layout, doping profiles and electrical parameters and therefore form a language for communication between process development and circuit design. This chapter looks at the physics of modern integrated bipolar junction transistors with particular emphasis on the derivation of closed-form expressions for their terminal behavior, which are required for the formulation of compact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.

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Reisch, M. (2003). Physics and Modeling of Bipolar Junction Transistors. In: High-Frequency Bipolar Transistors. Springer Series in Advanced Microelectronics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55900-6_3

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