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Oxidation of H-Terminated Silicon

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Fundamental Aspects of Silicon Oxidation

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 46))

Abstract

Recently, the densities, functions and operating speeds of integrated circuits driven by ever-increasing numbers of metal-oxide-semiconductor field-effect transistors (MOSFETs) have increased remarkably to produce not only ultrahigh-speed computers, but also many intelligent operating systems. This is largely a result of continuing progress in Si single-crystal growth and Si-related process and microfabrication technologies for integrated circuits. It is made possible by the stable electrical and thermal properties of Si-Si02 systems and the abundant silicon resources on the earth.

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Authors
  1. H. Nohira
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  2. T. Hattori
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Editors and Affiliations

  1. Agere Systems, Electronic and Photonic Materials Physics Research, 600-700 Mountain Avenue, Murray Hill, NJ, 07974-0636, USA

    Yves J. Chabal

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Nohira, H., Hattori, T. (2001). Oxidation of H-Terminated Silicon. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_4

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  • DOI: https://doi.org/10.1007/978-3-642-56711-7_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62583-1

  • Online ISBN: 978-3-642-56711-7

  • eBook Packages: Springer Book Archive

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